Chapter 5 FIELD EFFECT TRANSISTORS MCQs 12 min Score: 0 Attempted: 0/12 Subscribe 1. . The transconductance of FET depends upon (A) Drain supply (B) Gate to source voltage (C) The type of FET (D) Gate currentShow All Answers 2. . A FET is a...........controlled device whereas a bipolar transistor is a............controlled device. (A) Current, voltage (B) Drain, gate (C) Gate, drain (D) Voltage, currentShow All Answers 3. . In FET the drain voltage above which there is no increase in the drain current is called........ voltage (A) Critical (B) Pinch off (C) Breakdown (D) Pick offShow All Answers 4. . The gate input current of a FET is of the order of (A) Amperes (B) Hundreds of nanoamperes (C) Milliamperes (D) MicroamperesShow All Answers 5. . Which of the following is the common features between FETs and bipolars? (A) Difficult to bias (B) Low input impedance (C) Low voltage gain (D) Current controlled devicesShow All Answers 6. . The drain of FET is analogous to......... of BJT (A) Emitter (B) Collector (C) Base (D) SubstrateShow All Answers 7. . In P-channel FET the current is due to (A) Electrons (B) Both holes and electrons (C) Holes (D) Either holes or electronsShow All Answers 8. . A FET can be used as a variable (A) Inductor (B) Capacitor (C) Resistor (D) Voltage sourceShow All Answers 9. . Which of the following is not the main characteristic of FET? (A) None of the above (B) Forward transconductance (C) Temperature factor (D) Amplification factorShow All Answers 10. . n-channel FETs are superior to p-channel FETs because (A) They have high switching time (B) Mobility of electrons is greater than that of holes (C) They consume less power (D) Mobility of electrons is smaller than that of holesShow All Answers 11. . The input resistance of JFET ideally approaches (A) Zero (B) 5 ohms (C) Infinity (D) 200 ohmsShow All Answers 12. . The operation of a JFET involves a flow of (A) Recombination carriers (B) Any of the above (C) Minority carriers (D) Majority carriersShow All Answers