1. The process by which impurities are added to a pure semiconductor is:
(A) Diffusing
(B) Drift
(C) Mixing
(D) Doping
2. A Germanium atom contains _______.
(A) Two electron orbits
(B) Three valence electrons
(C) Four valence electrons
(D) Four protons
3. The type of atom bonding most common in semiconductor is _______.
(A) Metallic
(B) Ionic
(C) Covalent
(D) Chemical
4. The reverse resistance of an ideal diode is _______.
(A) Low
(B) Zero
(C) Infinite
(D) Very high
5. A circuit that removes positive or negative parts of a waveform is called:
(A) Clamper
(B) Rectifier
(C) Clipper
(D) Multiplier
6. Voltage multipliers are used to produce:
(A) Low voltage and low current
(B) Low voltage and high current
(C) High voltage and low current
(D) High voltage and high current
7. Diode acts as a closed switch when it is:
(A) Not biased
(B) Reverse biased
(C) Forward biased
(D) None of above
8. P region of a diode is called _______.
(A) Cathode
(B) Anode
(C) Any of these
(D) None of these
9. The amount of energy required to produce full conduction across the PN junction is _______.
(A) Junction potential
(B) Diode voltage
(C) Biased potential
(D) Barrier potential
10. The N region of a diode is called _______.
(A) Anode
(B) Cathode
(C) Barrier potential
(D) Biasing
11. A semiconductor device with a single PN junction that conducts current in only one direction is _______.
(A) Transistor
(B) Diode
(C) SCR
(D) Thyristor
12. The boundary between two different types of semiconductor materials is _______.
(A) Triode
(B) Diode
(C) PN junction
(D) Tetrode
13. The condition in which a diode prevents current is _______.
(A) Forward bias
(B) Breakdown
(C) Conduction
(D) Reverse bias
14. _______ is a semiconductor material.
(A) Silicon
(B) Germanium
(C) Neither a nor b
(D) Both a and b
15. The most widely used semiconductor material in electronic devices is _______.
(A) Germanium
(B) Carbon
(C) Copper
(D) Silicon
16. Electron-hole pairs are produced by _______.
(A) Recombination
(B) Ionization
(C) Thermal energy
(D) Doping
17. In an intrinsic semiconductor _______.
(e) b and d
(A) No free electrons
(B) Free electrons are thermally produced
(C) There are only holes
(D) As many electrons as holes
18. When a diode is forward biased _______.
(A) Current is produced by majority carriers
(B) Only electron current flows
(C) Only hole current flows
(D) Current is produced both holes & electrons
19. For silicon diode, the value of forward bias voltage typically is _______.
0.7V')"> (A) > 0.3V
0.7V')"> (B) > 0.7V
0.7V')"> (C) Depends on depletion region
0.7V')"> (D) Depends on majority carriers
20. When a 60Hz sinusoidal voltage is applied to a half wave rectifier, the output frequency is _______.
(A) 120Hz
(B) 30Hz
(C) 60Hz
(D) 0Hz