1. . In a phototransistor, base current is
(A) set by bias voltage
(B) not a factor
(C) inversely proportional to light
(D) directly proportional to light
2. . A large secondary current _________________ in n-p-n InGaAs phototransistor is achieved.
(A) Between base and collector
(B) Between base and emitter
(C) Between emitter and collector
(D) Plasma
3. . Which of the following is the difference between the n-p-n and conventional bipolar transistor?
(A) Electric property
(B) Magnetic property
(C) Unconnected base
(D) Emitter base efficiency
4. . The n-p-n hetero-junction phototransistor is grown using ______________
(A) Liquid-phase tranquilizers
(B) Liquid-phase epistaxis
(C) Solid substrate
(D) Hetero poleax
5. . What is the main benefit of the waveguide structure over conventional heterojunction phototransistor?
(A) High depletion region
(B) Depletion width
(C) Increased photocurrent, responsivity
(D) Low gain
6. . Solid State Relays (SSRs) have a
(A) coil and contact arrangement
(B) optocoupler
(C) scr
(D) none of the mentioned
7. . An LED and phototransistor is equivalent to a/an
(A) Thermocouple
(B) FET
(C) Optocoupler
(D) Regulator
8. . Optocoupler is otherwise known as
(A) Laser
(B) Photodiodes
(C) Photoconductive cell
(D) Optoisolator
9. . When the emitter junction is forward biased while the collector junction is reverse biased, the transistor is at ________ region.
(A) Cut-off
(B) Active
(C) Saturation
(D) Breakdown
10. . Which of the following has the highest input impedance
(A) FET
(B) BJT
(C) MOSFET
(D) Crystal diode